A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design

We present a charge-based Verilog-A model for 2-D-material (2DM)-based field-effect transistors (FETs) with application in neuromorphic circuit design. The combines the explicit solution of drift-diffusion transport and electrostatics, including Fermi–Dirac statistics. Ward–Dutton linear charge partitioning scheme is then employed terminal charges capacitance calculations. accurately predicts electrical behavior experimental MoS $_{\text{2}}$ FETs, it applied to simulate neuromorphic-circuit building blocks, floating-gate (FG) current-mirror (CM) vector-matrix multiplier (VMM), extracting effective number bits under different operation conditions.